IMPROVEMENT OF ELECTRICAL CHARACTERISTICS OF POLYCRYSTALLINE SILICON-CONTACTED DIODES AFTER FORWARD BIAS STRESSING
| dc.citation.epage | 1906 | en_US |
| dc.citation.issue | 18 | en_US |
| dc.citation.spage | 1904 | en_US |
| dc.citation.volume | 57 | en_US |
| dc.citation.woscount | 3 | |
| dc.contributor.author | WU, SL | en_US |
| dc.contributor.author | LEE, CL | en_US |
| dc.contributor.author | LEI, TF | en_US |
| dc.contributor.department | 交大名義發表 | zh_TW |
| dc.contributor.department | 電控工程研究所 | zh_TW |
| dc.contributor.department | National Chiao Tung University | en_US |
| dc.contributor.department | Institute of Electrical and Control Engineering | en_US |
| dc.date.accessioned | 2014-12-08T15:05:26Z | |
| dc.date.available | 2014-12-08T15:05:26Z | |
| dc.date.issued | 1990-10-29 | en_US |
| dc.identifier.doi | 10.1063/1.104007 | en_US |
| dc.identifier.issn | 0003-6951 | en_US |
| dc.identifier.journal | APPLIED PHYSICS LETTERS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1063/1.104007 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/3984 | |
| dc.identifier.wosnumber | WOS:A1990EF48900024 | |
| dc.language.iso | en_US | en_US |
| dc.title | IMPROVEMENT OF ELECTRICAL CHARACTERISTICS OF POLYCRYSTALLINE SILICON-CONTACTED DIODES AFTER FORWARD BIAS STRESSING | en_US |
| dc.type | Article | en_US |
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