Evaluation of TiN/Cu Gate Metal Scheme for AlGaN/GaN High-Electron-Mobility Transistor Application
| dc.citation.epage | en_US | |
| dc.citation.issue | 9 | en_US |
| dc.citation.volume | 6 | en_US |
| dc.citation.woscount | 1 | |
| dc.contributor.author | Lin, Yueh-Chin | en_US |
| dc.contributor.author | Chang, Chih-Hsiang | en_US |
| dc.contributor.author | Li, Fang-Ming | en_US |
| dc.contributor.author | Hsu, Li-Han | en_US |
| dc.contributor.author | Chang, Edward Yi | en_US |
| dc.contributor.department | 材料科學與工程學系 | zh_TW |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | Department of Materials Science and Engineering | en_US |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.date.accessioned | 2014-12-08T15:33:04Z | |
| dc.date.available | 2014-12-08T15:33:04Z | |
| dc.date.issued | 2013-09-01 | en_US |
| dc.description.abstract | The TiN/Cu metal scheme as gate metal for AlGaN/GaN high-electron-mobility transistors (HEMTs) is investigated. The copper-gated devices show comparable DC characteristics to the conventional Ni/Au-gated devices. No obvious of changes in I-DS and I-GS were observed for the device after being stressed at V-DS = 200 and V-GS = -5 V for 32 h. The thermal stability test indicates comparable Schottky barrier height for the TiN/Cu gate metal on GaN before and after 250 degrees C annealing for 1 h. Overall, the AlGaN/GaN HEMT with the TiN/Cu gate metal structure demonstrates excellent device DC characteristics, good thermal stability, and stable performance after a high-voltage stress test. (c) 2013 The Japan Society of Applied Physics | en_US |
| dc.identifier.doi | 10.7567/APEX.6.091003 | en_US |
| dc.identifier.issn | 1882-0778 | en_US |
| dc.identifier.journal | APPLIED PHYSICS EXPRESS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.7567/APEX.6.091003 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/23027 | |
| dc.identifier.wosnumber | WOS:000324494100003 | |
| dc.language.iso | en_US | en_US |
| dc.title | Evaluation of TiN/Cu Gate Metal Scheme for AlGaN/GaN High-Electron-Mobility Transistor Application | en_US |
| dc.type | Article | en_US |