CURRENT GAINS OF ALAS/GAAS TUNNELING EMITTER BIPOLAR-TRANSISTORS WITH 25-500-ANGSTROM BARRIER THICKNESS
| dc.citation.epage | 1884 | en_US |
| dc.citation.issue | 21 | en_US |
| dc.citation.spage | 1883 | en_US |
| dc.citation.volume | 29 | en_US |
| dc.citation.woscount | 3 | |
| dc.contributor.author | CHEN, HR | en_US |
| dc.contributor.author | LEE, CP | en_US |
| dc.contributor.author | CHANG, CY | en_US |
| dc.contributor.author | TSAI, KL | en_US |
| dc.contributor.author | TSANG, JS | en_US |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.date.accessioned | 2014-12-08T15:04:19Z | |
| dc.date.available | 2014-12-08T15:04:19Z | |
| dc.date.issued | 1993-10-14 | en_US |
| dc.description.abstract | The current gain of an AlAs/GaS tunnelling emitter bipolar transistor (TEBT) is found to increase monotonically with barrier thickness in the range 25-200 angstrom and fall off for barrier thickness increasing from 200 to 500 angstrom. It is found that a thicker barrier can suppress the base-to-emitter hole injection better and increase the current gain, but a barrier which is too thick decreases the current gain due to the suppression of the electron current. | en_US |
| dc.identifier.issn | 0013-5194 | en_US |
| dc.identifier.journal | ELECTRONICS LETTERS | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/2820 | |
| dc.identifier.wosnumber | WOS:A1993NE96700051 | |
| dc.language.iso | en_US | en_US |
| dc.subject | SEMICONDUCTOR DEVICES | en_US |
| dc.subject | HETEROJUNCTION BIPOLAR TRANSISTORS | en_US |
| dc.subject | TUNNELING STRUCTURES | en_US |
| dc.title | CURRENT GAINS OF ALAS/GAAS TUNNELING EMITTER BIPOLAR-TRANSISTORS WITH 25-500-ANGSTROM BARRIER THICKNESS | en_US |
| dc.type | Article | en_US |