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STOPPING POWER OF SEMICONDUCTING-III-V COMPOUNDS FOR LOW-ENERGY ELECTRONS

dc.citation.epage263en_US
dc.citation.issue2en_US
dc.citation.spage255en_US
dc.citation.volume19en_US
dc.citation.woscount16
dc.contributor.authorKWEI, CMen_US
dc.contributor.authorTUNG, CJen_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.date.accessioned2014-12-08T15:06:12Z
dc.date.available2014-12-08T15:06:12Z
dc.date.issued1986-02-14en_US
dc.identifier.doi10.1088/0022-3727/19/2/012en_US
dc.identifier.issn0022-3727en_US
dc.identifier.journalJOURNAL OF PHYSICS D-APPLIED PHYSICSen_US
dc.identifier.urihttp://dx.doi.org/10.1088/0022-3727/19/2/012en_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/4766
dc.identifier.wosnumberWOS:A1986A201100012
dc.language.isoen_USen_US
dc.titleSTOPPING POWER OF SEMICONDUCTING-III-V COMPOUNDS FOR LOW-ENERGY ELECTRONSen_US
dc.typeArticleen_US

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