Nitride-Based Blue Light-Emitting Diodes Grown With InN/GaN Matrix Quantum Wells
| dc.citation.epage | 260 | en_US |
| dc.citation.issue | 4 | en_US |
| dc.citation.spage | 255 | en_US |
| dc.citation.volume | 50 | en_US |
| dc.citation.woscount | 0 | |
| dc.contributor.author | Kuo, Cheng-Huang | en_US |
| dc.contributor.author | Fu, Yi Keng | en_US |
| dc.contributor.author | Chang, L. C. | en_US |
| dc.contributor.author | Chen, Yu An | en_US |
| dc.contributor.department | 照明與能源光電研究所 | zh_TW |
| dc.contributor.department | Institute of Lighting and Energy Photonics | en_US |
| dc.date.accessioned | 2014-12-08T15:35:24Z | |
| dc.date.available | 2014-12-08T15:35:24Z | |
| dc.date.issued | 2014-04-01 | en_US |
| dc.description.abstract | Nitride-based light-emitting diodes (LEDs) grown with a structure of InN/GaN matrix quantum-wells (QWs) using metal-organic chemical vapor deposition are fabricated and characterized. The InN/GaN matrix QWs can significantly enhance the formation of phase-separated In-rich regions. Under an injection current of 500 A/cm(2), the LED output power can be enhanced by 26%, and the efficiency droop can be improved as compared with a conventional LED. These improvements could be attributed to the strong localization effect to remove carriers from the confining potential and capture these carriers at nonradiative centers in the active layer. | en_US |
| dc.identifier.doi | 10.1109/JQE.2014.2306997 | en_US |
| dc.identifier.issn | 0018-9197 | en_US |
| dc.identifier.journal | IEEE JOURNAL OF QUANTUM ELECTRONICS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1109/JQE.2014.2306997 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/23965 | |
| dc.identifier.wosnumber | WOS:000332605500002 | |
| dc.language.iso | en_US | en_US |
| dc.subject | InN/GaN | en_US |
| dc.subject | efficiency droop | en_US |
| dc.subject | In rich | en_US |
| dc.subject | localization effect | en_US |
| dc.title | Nitride-Based Blue Light-Emitting Diodes Grown With InN/GaN Matrix Quantum Wells | en_US |
| dc.type | Article | en_US |