Single-photon avalanche diodes in 0.18-mu m high-voltage CMOS technology
| dc.citation.epage | 13339 | en_US |
| dc.citation.issue | 12 | en_US |
| dc.citation.spage | 13333 | en_US |
| dc.citation.volume | 25 | en_US |
| dc.citation.woscount | 5 | en_US |
| dc.contributor.author | Huang, L. D. | en_US |
| dc.contributor.author | Wu, J. Y. | en_US |
| dc.contributor.author | Wang, J. P. | en_US |
| dc.contributor.author | Tsai, C. M. | en_US |
| dc.contributor.author | Huang, Y. H. | en_US |
| dc.contributor.author | Wu, D. R. | en_US |
| dc.contributor.author | Lin, S. D. | en_US |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.date.accessioned | 2019-04-03T06:44:35Z | |
| dc.date.available | 2019-04-03T06:44:35Z | |
| dc.date.issued | 2017-06-12 | en_US |
| dc.description.abstract | We have designed and fabricated high-performance single-photon avalanche diodes (SPADs) by using 0.18-mu m high-voltage CMOS technology. Without any technology customization. the SPADs have low dark-count rate, high photon-detection probability, low afterpulsing probability, and acceptable timing jitter and breakdown voltage. Our design provides a low-cost and high-performance SPAD for various applications. (C) 2017 Optical Society of America | en_US |
| dc.identifier.doi | 10.1364/OE.25.013333 | en_US |
| dc.identifier.issn | 1094-4087 | en_US |
| dc.identifier.journal | OPTICS EXPRESS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1364/OE.25.013333 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/145674 | |
| dc.identifier.wosnumber | WOS:000403942300045 | en_US |
| dc.language.iso | en_US | en_US |
| dc.title | Single-photon avalanche diodes in 0.18-mu m high-voltage CMOS technology | en_US |
| dc.type | Article | en_US |