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Single-Mode, High-Speed, and High-Power Vertical-Cavity Surface-Emitting Lasers at 850 nm for Short to Medium Reach (2 km) Optical Interconnects

dc.citation.epage4044en_US
dc.citation.issue24en_US
dc.citation.spage4037en_US
dc.citation.volume31en_US
dc.citation.woscount2
dc.contributor.authorShi, Jin-Weien_US
dc.contributor.authorWei, Zhi-Ruien_US
dc.contributor.authorChi, Kai-Lunen_US
dc.contributor.authorJiang, Jia-Weien_US
dc.contributor.authorWun, Jhih-Minen_US
dc.contributor.authorLu, I-Chengen_US
dc.contributor.authorChen, Jason (Jyehong)en_US
dc.contributor.authorYang, Ying-Jayen_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.date.accessioned2014-12-08T15:33:23Z
dc.date.available2014-12-08T15:33:23Z
dc.date.issued2013-12-15en_US
dc.description.abstractThe vertical-cavity surface-emitting lasers (VCSELs) with high single-mode (narrow linewidth) output power are essential to minimize chromatic dispersion and to further improve the bit-rate distance product in a multimode fiber, which has a significant propagation loss (similar to 3.5 dB/km) at 850 nm wavelength. Here, we demonstrate the detailed design considerations and fabrication of a single-mode, high-power, and high-speed VCSELs at the 850 nm wavelength with oxide-relief and Zn-diffusion apertures for the application of short (0.3 km) to medium reach (2 km) optical interconnects. By optimizing the relative geometric sizes between two such apertures in our demonstrated 850-nm VCSELs, we can not only attain high single-mode output power (similar to 6.5 mW), but also with a reasonable threshold current (< 2.0 mA). Furthermore, the spatial hole burning effect induced low-frequency roll off can also be minimized in our optimized structure to obtain a maximum data rate up to 26 Gbit/s. The record-high bit rate-distance products for OM4 MMF transmission under ON-OFF keying (14 Gbit/s x 2.0 km) modulation formats have been successfully demonstrated by the use of our VCSEL.en_US
dc.identifier.doi10.1109/JLT.2013.2281235en_US
dc.identifier.issn0733-8724en_US
dc.identifier.journalJOURNAL OF LIGHTWAVE TECHNOLOGYen_US
dc.identifier.urihttp://dx.doi.org/10.1109/JLT.2013.2281235en_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/23204
dc.identifier.wosnumberWOS:000327721700008
dc.language.isoen_USen_US
dc.subjectSemiconductor lasersen_US
dc.subjectvertical-cavity surface-emitting lasers (VCSELs)en_US
dc.titleSingle-Mode, High-Speed, and High-Power Vertical-Cavity Surface-Emitting Lasers at 850 nm for Short to Medium Reach (2 km) Optical Interconnectsen_US
dc.typeArticleen_US

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