InAs/GaAs quantum-dot saturable absorbers for diode-pumped passively Q-switched Nd-doped 1.3-mu m lasers
| dc.citation.epage | 482 | en_US |
| dc.citation.issue | 5 | en_US |
| dc.citation.spage | 480 | en_US |
| dc.citation.volume | 30 | en_US |
| dc.citation.woscount | 9 | |
| dc.contributor.author | Lai, HC | en_US |
| dc.contributor.author | Li, A | en_US |
| dc.contributor.author | Su, KW | en_US |
| dc.contributor.author | Ku, ML | en_US |
| dc.contributor.author | Chen, YF | en_US |
| dc.contributor.author | Huang, KF | en_US |
| dc.contributor.department | 電子物理學系 | zh_TW |
| dc.contributor.department | Department of Electrophysics | en_US |
| dc.date.accessioned | 2014-12-08T15:19:37Z | |
| dc.date.available | 2014-12-08T15:19:37Z | |
| dc.date.issued | 2005-03-01 | en_US |
| dc.description.abstract | Received August 6, 2004 A low-loss semiconductor saturable absorber based on InAs/GaAs quantum dots was developed for Q switching of a diode-pumped Nd-doped laser operating at 1.3 mum. With an InAs/GaAs quantum-dot saturable absorber, a diode-pumped Nd:YVO4 laser at 1342 nm. was achieved. With an incident pump power of 2.2 W, an average output power of 360 mW with a Q-switched pulse width of 90 ns at a pulse repetition rate of 770 kHz was obtained. (C) 2005 Optical Society of America | en_US |
| dc.identifier.doi | 10.1364/OL.30.000480 | en_US |
| dc.identifier.issn | 0146-9592 | en_US |
| dc.identifier.journal | OPTICS LETTERS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1364/OL.30.000480 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/13953 | |
| dc.identifier.wosnumber | WOS:000227371800010 | |
| dc.language.iso | en_US | en_US |
| dc.title | InAs/GaAs quantum-dot saturable absorbers for diode-pumped passively Q-switched Nd-doped 1.3-mu m lasers | en_US |
| dc.type | Article | en_US |
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