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A 12-Bit 1.25-GS/s DAC in 90 nm CMOS With > 70 dB SFDR up to 500 MHz

dc.citation.epage2856en_US
dc.citation.issue12en_US
dc.citation.spage2845en_US
dc.citation.volume46en_US
dc.citation.woscount13
dc.contributor.authorTseng, Wei-Hsinen_US
dc.contributor.authorFan, Chi-Weien_US
dc.contributor.authorWu, Jieh-Tsorngen_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.date.accessioned2014-12-08T15:21:00Z
dc.date.available2014-12-08T15:21:00Z
dc.date.issued2011-12-01en_US
dc.description.abstractA current-steering digital-to-analog converter (DAC) was fabricated using a 90 nm CMOS technology. Its dynamic performance is enhanced by adopting a digital random return-to-zero (DRRZ) operation and a compact current cell design. The DRRZ also facilitates a current-cell background calibration technique that ensures the DAC static linearity. The measured differential nonlinearity (DNL) is 0.5 LSB and the integral nonlinearity (INL) is 1.2 LSB. At 1.25 GS/s sampling rate, the DAC achieves a spurious-free dynamic range (SFDR) better than 70 dB up to 500 MHz input frequency. The DAC occupies an active area of 1100 x 750 mu m(2). It consumes a total of 128 mW from a 1.2 V and a 2.5 V supply.en_US
dc.identifier.doi10.1109/JSSC.2011.2164302en_US
dc.identifier.issn0018-9200en_US
dc.identifier.journalIEEE JOURNAL OF SOLID-STATE CIRCUITSen_US
dc.identifier.urihttp://dx.doi.org/10.1109/JSSC.2011.2164302en_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/14920
dc.identifier.wosnumberWOS:000297573300010
dc.language.isoen_USen_US
dc.subjectBackground calibrationen_US
dc.subjectcurrent-steeringen_US
dc.subjectD/A convertersen_US
dc.subjectdigital random return-to-zero (DRRZ)en_US
dc.subjectdigital-analog conversionen_US
dc.subjectdigital-to-analog converter (DAC)en_US
dc.subjectreturn-to-zero (RZ)en_US
dc.titleA 12-Bit 1.25-GS/s DAC in 90 nm CMOS With > 70 dB SFDR up to 500 MHzen_US
dc.typeArticleen_US

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