THE EFFECT OF TEMPERATURE ON I-V-CHARACTERISTICS OF A-SI-H PHOTODIODE
| dc.citation.epage | L1228 | en_US |
| dc.citation.issue | 9A | en_US |
| dc.citation.spage | L1226 | en_US |
| dc.citation.volume | 31 | en_US |
| dc.citation.woscount | 2 | |
| dc.contributor.author | CHANG, KL | en_US |
| dc.contributor.author | YEH, CF | en_US |
| dc.contributor.department | 交大名義發表 | zh_TW |
| dc.contributor.department | 電控工程研究所 | zh_TW |
| dc.contributor.department | National Chiao Tung University | en_US |
| dc.contributor.department | Institute of Electrical and Control Engineering | en_US |
| dc.date.accessioned | 2014-12-08T15:04:47Z | |
| dc.date.available | 2014-12-08T15:04:47Z | |
| dc.date.issued | 1992-09-01 | en_US |
| dc.description.abstract | A 16-bit/mm, high-resolution, Schottky a-Si:H photodiode linear sensor array was fabricated, and the effect of temperature on its I-V characteristics was studied. Annealing the a-Si:H photodiodes at 200-degrees-C in air for 30 minutes lowered the dark current and improved the I(p)/I(d). Under reverse bias, the dark current increased with temperature and doubled for every 8.89-degrees-C rise, while the photocurrent showed few effects below 100-degrees-C. | en_US |
| dc.identifier.issn | 0021-4922 | en_US |
| dc.identifier.journal | JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/3294 | |
| dc.identifier.wosnumber | WOS:A1992JM28200005 | |
| dc.language.iso | en_US | en_US |
| dc.subject | HYDROGENATED AMORPHOUS SILICON (A-SI-H) | en_US |
| dc.subject | PHOTODIODE | en_US |
| dc.subject | DARK CURRENT | en_US |
| dc.subject | PHOTOCURRENT | en_US |
| dc.subject | BARRIER | en_US |
| dc.title | THE EFFECT OF TEMPERATURE ON I-V-CHARACTERISTICS OF A-SI-H PHOTODIODE | en_US |
| dc.type | Article | en_US |
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