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HIGH ORIENTATION CDS THIN-FILMS GROWN BY PULSED LASER AND THERMAL EVAPORATION

dc.citation.epage488en_US
dc.citation.issue3en_US
dc.citation.spage484en_US
dc.citation.volume10en_US
dc.citation.woscount20
dc.contributor.authorDAI, CMen_US
dc.contributor.authorHORNG, Len_US
dc.contributor.authorHSIEH, WFen_US
dc.contributor.authorSHIH, YTen_US
dc.contributor.authorTSAI, CTen_US
dc.contributor.authorCHUU, DSen_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.contributor.departmentDepartment of Photonicsen_US
dc.date.accessioned2014-12-08T15:04:55Z
dc.date.available2014-12-08T15:04:55Z
dc.date.issued1992-05-01en_US
dc.description.abstractUndoped CdS films have been grown by pulsed laser evaporation (PLE) and thermal evaporation (TE) techniques on Corning's 7059 glass at a substrate temperature between room temperature and 250-degrees-C. The deposition rates are 0.07 angstrom/s for PLE and 60 angstrom/s for the TE technique. These as-deposited films have high (002) preferred orientation by both techniques even without preheating the substrate. However, films deposited by PLE have more preferred orientation and larger grain size. These features make the PLE films have sharper Raman peaks, smaller Raman shift of surface mode and more overtones of longitudinal optical phonon mode observed than those in TE films. The transparency of PLE or TE films for wavelengths which are larger than that of absorption edge is around 90% on average.en_US
dc.identifier.doi10.1116/1.578175en_US
dc.identifier.issn0734-2101en_US
dc.identifier.journalJOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMSen_US
dc.identifier.urihttp://dx.doi.org/10.1116/1.578175en_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/3440
dc.identifier.wosnumberWOS:A1992HU24200010
dc.language.isoen_USen_US
dc.titleHIGH ORIENTATION CDS THIN-FILMS GROWN BY PULSED LASER AND THERMAL EVAPORATIONen_US
dc.typeArticleen_US

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