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Ring edge in film morphology: Benefit or obstacle for ink jet fabrication of organic thin film transistors

dc.citation.epage464en_US
dc.citation.issue5en_US
dc.citation.spage461en_US
dc.citation.volume51en_US
dc.citation.woscount0
dc.contributor.authorLu, Jhih-Pingen_US
dc.contributor.authorChen, Ying-pinen_US
dc.contributor.authorLee, Yuh-Zhengen_US
dc.contributor.authorCheng, Kevinen_US
dc.contributor.authorChen, Fang-Chungen_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.department顯示科技研究所zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.contributor.departmentInstitute of Displayen_US
dc.date.accessioned2014-12-08T15:13:28Z
dc.date.available2014-12-08T15:13:28Z
dc.date.issued2007-09-01en_US
dc.description.abstractIn this study, a novel process using ink jet printing with dilute PMMA [poly(methylmethactylate)] solution to form fine separation banks as confined boundaries for the subsequent depositing poly(3,4-ethylene dioxythiophene) (PEDOT) was proposed. The PEDOT comprised the source and drained electrodes with a gap of several micrometers due to the innate characteristic of the ring edge of ink jetted PMMA. Using this technique, the organic device was designed with a bottom gate and evaporated pentacene as the channel material. The device mobility and onloff ratio were about 3.6x 10(-4) and 2x 10(2) cm(2) /Vsec, respectively. (C) 2007 Society for Imaging Science and Technology.en_US
dc.identifier.doi10.2352/J.ImagingSci.Technol.(2007)51:5(461)en_US
dc.identifier.issn1062-3701en_US
dc.identifier.journalJOURNAL OF IMAGING SCIENCE AND TECHNOLOGYen_US
dc.identifier.urihttp://dx.doi.org/10.2352/J.ImagingSci.Technol.(2007)51:5(461)en_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/10406
dc.identifier.wosnumberWOS:000250487200012
dc.language.isoen_USen_US
dc.titleRing edge in film morphology: Benefit or obstacle for ink jet fabrication of organic thin film transistorsen_US
dc.typeArticleen_US

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