RELIABILITY STUDIES OF GAIN-GUIDED 0.85 MU-M GAAS/ALGAAS QUANTUM-WELL SURFACE-EMITTING LASERS
| dc.citation.epage | 39 | en_US |
| dc.citation.issue | 1 | en_US |
| dc.citation.spage | 37 | en_US |
| dc.citation.volume | 6 | en_US |
| dc.citation.woscount | 8 | |
| dc.contributor.author | WU, CC | en_US |
| dc.contributor.author | TAI, K | en_US |
| dc.contributor.author | HUANG, TC | en_US |
| dc.contributor.author | HUANG, KF | en_US |
| dc.contributor.department | 電子物理學系 | zh_TW |
| dc.contributor.department | 光電工程學系 | zh_TW |
| dc.contributor.department | Department of Electrophysics | en_US |
| dc.contributor.department | Department of Photonics | en_US |
| dc.date.accessioned | 2014-12-08T15:04:10Z | |
| dc.date.available | 2014-12-08T15:04:10Z | |
| dc.date.issued | 1994-01-01 | en_US |
| dc.description.abstract | A reliability study of gain-guided 0.85 mum GaAs/AlGaAs quantum well surface emitting lasers is reported for the first time. 32 lasers were randomly selected to operate at 25 or 50 C with bias currents up to 15 mA, about 4 times the threshold values. The power outputs of the 32 lasers showed no noticeable degradation after 2000-3000 hours of operation. | en_US |
| dc.identifier.doi | 10.1109/68.265882 | en_US |
| dc.identifier.issn | 1041-1135 | en_US |
| dc.identifier.journal | IEEE PHOTONICS TECHNOLOGY LETTERS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1109/68.265882 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/2669 | |
| dc.identifier.wosnumber | WOS:A1994MX80100012 | |
| dc.language.iso | en_US | en_US |
| dc.title | RELIABILITY STUDIES OF GAIN-GUIDED 0.85 MU-M GAAS/ALGAAS QUANTUM-WELL SURFACE-EMITTING LASERS | en_US |
| dc.type | Article | en_US |