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Robust level coincidences in the subband structure of quasi-2D systems

dc.citation.epage2099en_US
dc.citation.issue23en_US
dc.citation.spage2096en_US
dc.citation.volume152en_US
dc.citation.woscount5
dc.contributor.authorWinkler, R.en_US
dc.contributor.authorWang, L. Y.en_US
dc.contributor.authorLin, Y. H.en_US
dc.contributor.authorChu, C. S.en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.date.accessioned2014-12-08T15:28:53Z
dc.date.available2014-12-08T15:28:53Z
dc.date.issued2012-12-01en_US
dc.description.abstractRecently, level crossings in the energy bands of crystals have been identified as a key signature for topological phase transitions. Using realistic models we show that the parameter space controlling the occurrence of level coincidences in energy bands has a much richer structure than anticipated previously. In particular, we identify robust level coincidences that cannot be removed by a small perturbation of the Hamiltonian compatible with the crystal symmetry. Different topological phases that are insulating in the bulk are then separated by a gapless (metallic) phase. We consider HgTe/CdTe quantum wells as a specific example. (c) 2012 Elsevier Ltd. All rights reserved.en_US
dc.identifier.doi10.1016/j.ssc.2012.09.002en_US
dc.identifier.issn0038-1098en_US
dc.identifier.journalSOLID STATE COMMUNICATIONSen_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.ssc.2012.09.002en_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/20866
dc.identifier.wosnumberWOS:000312233600007
dc.language.isoen_USen_US
dc.subjectSemiconductorsen_US
dc.subjectTopological insulatorsen_US
dc.titleRobust level coincidences in the subband structure of quasi-2D systemsen_US
dc.typeArticleen_US

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