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Effect of ZnSe partial capping on the ripening dynamics of CdSe quantum dots

dc.citation.epageen_US
dc.citation.issue8en_US
dc.citation.volume90en_US
dc.citation.woscount1
dc.contributor.authorLai, Y. J.en_US
dc.contributor.authorYang, C. S.en_US
dc.contributor.authorChen, W. K.en_US
dc.contributor.authorLee, M. C.en_US
dc.contributor.authorChang, W. H.en_US
dc.contributor.authorChou, W. C.en_US
dc.contributor.authorWang, J. S.en_US
dc.contributor.authorHuang, W. J.en_US
dc.contributor.authorJeng, Erik S.en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.date.accessioned2014-12-08T15:14:40Z
dc.date.available2014-12-08T15:14:40Z
dc.date.issued2007-02-19en_US
dc.description.abstractThe ripening dynamics of CdSe quantum dots (QDs) partially capped with ZnSe layer are investigated. Atomic force microscopy (AFM) images show that the ripening of QDs is dramatically accelerated by depositing a ZnSe partial capping layer. The driving force of ripening enhancement is attributed to the increasing strain energy with capping thickness. For a ZnSe partial capping layer of below 3 ML, photoluminescence exhibits a clear redshift with increasing ZnSe monolayers. It is attributed to the size of the CdSe QD increases with ZnSe partial capping, in a manner that is consistent with the results of the AFM study. (c) 2007 American Institute of Physics.en_US
dc.identifier.doi10.1063/1.2696585en_US
dc.identifier.issn0003-6951en_US
dc.identifier.journalAPPLIED PHYSICS LETTERSen_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.2696585en_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/11117
dc.identifier.wosnumberWOS:000244420600082
dc.language.isoen_USen_US
dc.titleEffect of ZnSe partial capping on the ripening dynamics of CdSe quantum dotsen_US
dc.typeArticleen_US

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