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CALCULATION OF THE STRUCTURAL DEPENDENCE OF INFRARED-ABSORPTION IN P-TYPE STRAINED-LAYER SIGE/SI QUANTUM-WELLS

dc.citation.epage6650en_US
dc.citation.issue12en_US
dc.citation.spage6646en_US
dc.citation.volume77en_US
dc.citation.woscount1
dc.contributor.authorLIOU, TSen_US
dc.contributor.authorWANG, THen_US
dc.contributor.authorCHANG, CYen_US
dc.contributor.department交大名義發表zh_TW
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentNational Chiao Tung Universityen_US
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.date.accessioned2014-12-08T15:03:19Z
dc.date.available2014-12-08T15:03:19Z
dc.date.issued1995-06-15en_US
dc.identifier.doi10.1063/1.359076en_US
dc.identifier.issn0021-8979en_US
dc.identifier.journalJOURNAL OF APPLIED PHYSICSen_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.359076en_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/1858
dc.identifier.wosnumberWOS:A1995RD57200085
dc.language.isoen_USen_US
dc.titleCALCULATION OF THE STRUCTURAL DEPENDENCE OF INFRARED-ABSORPTION IN P-TYPE STRAINED-LAYER SIGE/SI QUANTUM-WELLSen_US
dc.typeArticleen_US

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