Interface Polarization Fluctuation Effect of Ferroelectric Hafnium-Zirconium-Oxide Ferroelectric Memory with Nearly Ideal Subthreshold Slope
| dc.citation.epage | 42 | en_US |
| dc.citation.spage | 41 | en_US |
| dc.citation.woscount | 0 | en_US |
| dc.contributor.author | Chiu, Yu-Chien | en_US |
| dc.contributor.author | Cheng, Chun-Hu | en_US |
| dc.contributor.author | Fan, Chia-Chi | en_US |
| dc.contributor.author | Chen, Po-Chun | en_US |
| dc.contributor.author | Chang, Chun-Yen | en_US |
| dc.contributor.author | Lee, Min-Hung | en_US |
| dc.contributor.author | Liu, Chien | en_US |
| dc.contributor.author | Yen, Shiang-Shiou | en_US |
| dc.contributor.author | Hsu, Hsiao-Hsuan | en_US |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.date.accessioned | 2017-04-21T06:48:41Z | |
| dc.date.available | 2017-04-21T06:48:41Z | |
| dc.date.issued | 2015 | en_US |
| dc.identifier.isbn | 978-1-4673-8135-2 | en_US |
| dc.identifier.journal | 2015 73RD ANNUAL DEVICE RESEARCH CONFERENCE (DRC) | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/135989 | |
| dc.identifier.wosnumber | WOS:000380440500011 | en_US |
| dc.language.iso | en_US | en_US |
| dc.title | Interface Polarization Fluctuation Effect of Ferroelectric Hafnium-Zirconium-Oxide Ferroelectric Memory with Nearly Ideal Subthreshold Slope | en_US |
| dc.type | Proceedings Paper | en_US |
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