Interface Polarization Fluctuation Effect of Ferroelectric Hafnium-Zirconium-Oxide Ferroelectric Memory with Nearly Ideal Subthreshold Slope

Date

Authors

Chang, Chun-Yen

Yen, Shiang-Shiou

Hsu, Hsiao-Hsuan

URI

https://ir.lib.nycu.edu.tw/handle/11536/135989

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會議論文;;Conferences Paper