Interface Polarization Fluctuation Effect of Ferroelectric Hafnium-Zirconium-Oxide Ferroelectric Memory with Nearly Ideal Subthreshold Slope

标题:	Interface Polarization Fluctuation Effect of Ferroelectric Hafnium-Zirconium-Oxide Ferroelectric Memory with Nearly Ideal Subthreshold Slope
作者:	Chiu, Yu-Chien Cheng, Chun-Hu Fan, Chia-Chi Chen, Po-Chun Chang, Chun-Yen Lee, Min-Hung Liu, Chien Yen, Shiang-Shiou Hsu, Hsiao-Hsuan 电子工程学系及电子研究所 Department of Electronics Engineering and Institute of Electronics
公开日期:	2015
URI:	http://hdl.handle.net/11536/135989
ISBN:	978-1-4673-8135-2
期刊:	2015 73RD ANNUAL DEVICE RESEARCH CONFERENCE (DRC)
起始页:	41
结束页:	42
显示于类别：	Conferences Paper