Charge storage characteristics of high density Mo nanocrystal embedded in silicon oxide and silicon nitride
| dc.citation.epage | en_US | |
| dc.citation.issue | 7 | en_US |
| dc.citation.volume | 43 | en_US |
| dc.citation.woscount | 3 | |
| dc.contributor.author | Lin, Chao-Cheng | en_US |
| dc.contributor.author | Chang, Ting-Chang | en_US |
| dc.contributor.author | Tu, Chun-Hao | en_US |
| dc.contributor.author | Chen, Shih-Ching | en_US |
| dc.contributor.author | Hu, Chih-Wei | en_US |
| dc.contributor.author | Sze, Simon M. | en_US |
| dc.contributor.author | Tseng, Tseung-Yuen | en_US |
| dc.contributor.author | Chen, Sheng-Chi | en_US |
| dc.contributor.author | Lin, Jian-Yang | en_US |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.date.accessioned | 2014-12-08T15:07:23Z | |
| dc.date.available | 2014-12-08T15:07:23Z | |
| dc.date.issued | 2010-02-24 | en_US |
| dc.description.abstract | We investigated the formation and charge storage characteristics of Mo nanocrystals in silicon oxide and in silicon nitride by rapid thermal annealing of oxygen- and nitrogen-incorporated Mo and Si mixed layers. A high density of Mo nanocrystal (6 x 10(12) cm(-2)) was formed in the nitrogen-incorporated layer. Electrical analyses indicated that the memory window of the Mo nanocrystal embedded in the nitride is larger than that in the oxide. A reliability test showed that the Mo nanocrystal in the nitride has better reliability than the Mo nanocrystal in the oxide, which was explained by an electrical field simulation. | en_US |
| dc.identifier.doi | 10.1088/0022-3727/43/7/075106 | en_US |
| dc.identifier.issn | 0022-3727 | en_US |
| dc.identifier.journal | JOURNAL OF PHYSICS D-APPLIED PHYSICS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1088/0022-3727/43/7/075106 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/5823 | |
| dc.identifier.wosnumber | WOS:000274318200009 | |
| dc.language.iso | en_US | en_US |
| dc.title | Charge storage characteristics of high density Mo nanocrystal embedded in silicon oxide and silicon nitride | en_US |
| dc.type | Article | en_US |