Memory effect of oxide/SiC : O/oxide sandwiched structures
| dc.citation.epage | 2096 | en_US |
| dc.citation.issue | 12 | en_US |
| dc.citation.spage | 2094 | en_US |
| dc.citation.volume | 84 | en_US |
| dc.citation.woscount | 6 | |
| dc.contributor.author | Chang, TC | en_US |
| dc.contributor.author | Yan, ST | en_US |
| dc.contributor.author | Yang, FM | en_US |
| dc.contributor.author | Liu, PT | en_US |
| dc.contributor.author | Sze, SM | en_US |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.date.accessioned | 2014-12-08T15:39:27Z | |
| dc.date.available | 2014-12-08T15:39:27Z | |
| dc.date.issued | 2004-03-22 | en_US |
| dc.description.abstract | The memory effects of the oxide/oxygen-incorporated silicon carbide (SiC:O)/oxide sandwiched structure were investigated. The memory window is decreased with the increase of the oxygen content in the SiC:O film due to the reduction of dangling bonds. A concise model is proposed to explain the reduction of dangling bonds with increasing oxygen content. Also, a higher breakdown voltage is observed with less oxygen content in the SiC:O film, which is attributed to the high barrier height induced by electron trapping in the SiC:O film. (C) 2004 American Institute of Physics. | en_US |
| dc.identifier.doi | 10.1063/1.1675924 | en_US |
| dc.identifier.issn | 0003-6951 | en_US |
| dc.identifier.journal | APPLIED PHYSICS LETTERS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1063/1.1675924 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/26940 | |
| dc.identifier.wosnumber | WOS:000220268500028 | |
| dc.language.iso | en_US | en_US |
| dc.title | Memory effect of oxide/SiC : O/oxide sandwiched structures | en_US |
| dc.type | Article | en_US |