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CONTROL APPARATUS FOR SINGLE-CRYSTAL GROWTH IN AQUEOUS-SOLUTION METHOD

dc.citation.epage228en_US
dc.citation.issue2en_US
dc.citation.spage223en_US
dc.citation.volume17en_US
dc.citation.woscount0
dc.contributor.authorSHIE, JSen_US
dc.contributor.authorHUANG, CTen_US
dc.contributor.department交大名義發表zh_TW
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentNational Chiao Tung Universityen_US
dc.contributor.departmentDepartment of Photonicsen_US
dc.date.accessioned2014-12-08T15:04:06Z
dc.date.available2014-12-08T15:04:06Z
dc.date.issued1994-03-01en_US
dc.description.abstractA new technique has been developed for controlling the crystal-growth rate in the aqueous solution method. This technique provides a programmable preset of the temperature evolution of solution. Initially, the growth rate is kept slow to ensure good crystal quality. Gradually the rate is accelerated to increase the growth efficiency. A simple control mechanism is devised to achieve a very slow and pre-determined cooling rate, which can be adapted to the temperature-related characteristics of various solutions and thermistor sensor. Single crystal growth of KDP has been demonstrated. The result verifies our prediction that a linear growth rate of the crystal dimension with a good seed-to-grown crystal interface can be obtained programmatically.en_US
dc.identifier.issn0253-3839en_US
dc.identifier.journalJOURNAL OF THE CHINESE INSTITUTE OF ENGINEERSen_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/2607
dc.identifier.wosnumberWOS:A1994NJ60900007
dc.language.isoen_USen_US
dc.subjectCRYSTAL GROWTHen_US
dc.subjectAQUEOUS SOLUTION METHODen_US
dc.subjectCONTROL ELECTRONICSen_US
dc.subjectKDPen_US
dc.titleCONTROL APPARATUS FOR SINGLE-CRYSTAL GROWTH IN AQUEOUS-SOLUTION METHODen_US
dc.typeArticleen_US

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