Fabrication of High-Sensitivity Polycrystalline Silicon Nanowire Field-Effect Transistor pH Sensor Using Conventional Complementary Metal-Oxide-Semiconductor Technology (vol 50, 04DL05, 2011)
| dc.citation.volume | 57 | en_US |
| dc.contributor.author | Chen, Hou-Yu | en_US |
| dc.contributor.author | Lin, Chia-Yi | en_US |
| dc.contributor.author | Chen, Min-Cheng | en_US |
| dc.contributor.author | Huang, Chien-Chao | en_US |
| dc.contributor.author | Chien, Chao-Hsin | en_US |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.date.accessioned | 2018-08-21T05:53:34Z | |
| dc.date.available | 2018-08-21T05:53:34Z | |
| dc.date.issued | 2018-05-01 | en_US |
| dc.identifier.doi | 10.7567/JJAP.57.059202 | en_US |
| dc.identifier.issn | 0021-4922 | en_US |
| dc.identifier.journal | JAPANESE JOURNAL OF APPLIED PHYSICS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.7567/JJAP.57.059202 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/144869 | |
| dc.identifier.wosnumber | WOS:000430511800001 | en_US |
| dc.language.iso | en_US | en_US |
| dc.title | Fabrication of High-Sensitivity Polycrystalline Silicon Nanowire Field-Effect Transistor pH Sensor Using Conventional Complementary Metal-Oxide-Semiconductor Technology (vol 50, 04DL05, 2011) | en_US |
| dc.type | Article | en_US |
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