Efficiency Enhancement of GaN/InGaN Vertical-Injection Light Emitting Diodes Using Distinctive Indium-Tin-Oxide Nanorods

Abstract

Distinctive indium-tin-oxide nanorods are demonstrated using glancing-angle deposition. The nanostructured material exhibit enhanced transmission and is employed to enhance the light-output-power of GaN/InGaN vertical-injection light emitting diodes by 20% at an injection current of 350mA. (C) 2008 Optical Society of America