Efficiency Enhancement of GaN/InGaN Vertical-Injection Light Emitting Diodes Using Distinctive Indium-Tin-Oxide Nanorods
| dc.citation.epage | 3144 | en_US |
| dc.citation.spage | 3143 | en_US |
| dc.contributor.author | Yang, C. S. | en_US |
| dc.contributor.author | Yu, Peichen | en_US |
| dc.contributor.author | Chiu, C. H. | en_US |
| dc.contributor.author | Chang, C. H. | en_US |
| dc.contributor.author | Kuo, H. C. | en_US |
| dc.contributor.department | 光電工程學系 | zh_TW |
| dc.contributor.department | Department of Photonics | en_US |
| dc.date.accessioned | 2014-12-08T15:25:05Z | |
| dc.date.available | 2014-12-08T15:25:05Z | |
| dc.date.issued | 2009 | en_US |
| dc.description.abstract | Distinctive indium-tin-oxide nanorods are demonstrated using glancing-angle deposition. The nanostructured material exhibit enhanced transmission and is employed to enhance the light-output-power of GaN/InGaN vertical-injection light emitting diodes by 20% at an injection current of 350mA. (C) 2008 Optical Society of America | en_US |
| dc.identifier.isbn | 978-1-4244-5184-5 | en_US |
| dc.identifier.journal | 2009 CONFERENCE ON LASERS AND ELECTRO-OPTICS AND QUANTUM ELECTRONICS AND LASER SCIENCE CONFERENCE (CLEO/QELS 2009), VOLS 1-5 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/17461 | |
| dc.identifier.wosnumber | WOS:000274751302557 | |
| dc.language.iso | en_US | en_US |
| dc.title | Efficiency Enhancement of GaN/InGaN Vertical-Injection Light Emitting Diodes Using Distinctive Indium-Tin-Oxide Nanorods | en_US |
| dc.type | Proceedings Paper | en_US |
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