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High density GaN/AlN quantum dots for deep UV LED with high quantum efficiency and temperature stability

dc.citation.epage0en_US
dc.citation.spage0en_US
dc.citation.volume4en_US
dc.citation.woscount18en_US
dc.contributor.authorYang, Weihuangen_US
dc.contributor.authorLi, Jinchaien_US
dc.contributor.authorZhang, Yongen_US
dc.contributor.authorHuang, Po-Kaien_US
dc.contributor.authorLu, Tien-Changen_US
dc.contributor.authorKuo, Hao-Chungen_US
dc.contributor.authorLi, Shupingen_US
dc.contributor.authorYang, Xuen_US
dc.contributor.authorChen, Hangyangen_US
dc.contributor.authorLiu, Dayien_US
dc.contributor.authorKang, Junyongen_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.date.accessioned2019-04-03T06:43:11Z
dc.date.available2019-04-03T06:43:11Z
dc.date.issued2014-06-05en_US
dc.description.abstractHigh internal efficiency and high temperature stability ultraviolet (UV) light-emitting diodes (LEDs) at 308 nm were achieved using high density (2.5 x 10(9) cm(-2)) GaN/AlN quantum dots (QDs) grown by MOVPE. Photoluminescence shows the characteristic behaviors of QDs: nearly constant linewidth and emission energy, and linear dependence of the intensity with varying excitation power. More significantly, the radiative recombination was found to dominant from 15 to 300 K, with a high internal quantum efficiency of 62% even at room temperature.en_US
dc.identifier.doi10.1038/srep05166en_US
dc.identifier.issn2045-2322en_US
dc.identifier.journalSCIENTIFIC REPORTSen_US
dc.identifier.urihttp://dx.doi.org/10.1038/srep05166en_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/24396
dc.identifier.wosnumberWOS:000336788400001en_US
dc.language.isoen_USen_US
dc.titleHigh density GaN/AlN quantum dots for deep UV LED with high quantum efficiency and temperature stabilityen_US
dc.typeArticleen_US

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