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Pulse Electrodeposition of Iridium Oxide on Silicon Nanotips for Field Emission study

dc.citation.epage3268en_US
dc.citation.issue5en_US
dc.citation.spage3264en_US
dc.citation.volume9en_US
dc.citation.woscount3
dc.contributor.authorChen, Te-Mingen_US
dc.contributor.authorHung, Jui-Yien_US
dc.contributor.authorPan, Fu-Mingen_US
dc.contributor.authorChang, L.en_US
dc.contributor.authorWu, Shich-Chuanen_US
dc.contributor.authorTien, Ta-Changen_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.date.accessioned2014-12-08T15:09:30Z
dc.date.available2014-12-08T15:09:30Z
dc.date.issued2009-05-01en_US
dc.description.abstractTo improve electron field emission properties of anodic aluminum oxide (AAO) templated Si nanotips, IrO(2) nanoparticles were deposited on the nanotips using bipolar pulse electrodeposition method. The IrO(2) nanoparticles had a uniform size distribution with an average value of similar to 4 nm, and well dispersed on the ordered Si nanotips. Due to the small radius and a lower work function, the IrO(2)/Si nanotip exhibited field emission properties better than the bare Si nanotip with a field enhancement factor of similar to 128. The SEM and TEM were utilized to investigate the structure and morphology. The physical and chemical properties were evaluated XRD and X-ray photoelectron spectroscopy (XPS).en_US
dc.identifier.doi10.1166/jnn.2009.203en_US
dc.identifier.issn1533-4880en_US
dc.identifier.journalJOURNAL OF NANOSCIENCE AND NANOTECHNOLOGYen_US
dc.identifier.urihttp://dx.doi.org/10.1166/jnn.2009.203en_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/7251
dc.identifier.wosnumberWOS:000265186800070
dc.language.isoen_USen_US
dc.subjectPulse Electrodepositionen_US
dc.subjectField Emissionen_US
dc.subjectSi Nanotipen_US
dc.subjectIridium Oxideen_US
dc.titlePulse Electrodeposition of Iridium Oxide on Silicon Nanotips for Field Emission studyen_US
dc.typeArticleen_US

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