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The Formation of Smooth Facets on Wet-Etched Patterned Sapphire Substrate

dc.citation.epageR8en_US
dc.citation.issue2en_US
dc.citation.spageR5en_US
dc.citation.volume3en_US
dc.citation.woscount0
dc.contributor.authorChen, Yu-Chungen_US
dc.contributor.authorLin, Bo-Wenen_US
dc.contributor.authorHsu, Wen-Chingen_US
dc.contributor.authorWu, YewChung Sermonen_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.date.accessioned2014-12-08T15:35:08Z
dc.date.available2014-12-08T15:35:08Z
dc.date.issued2014en_US
dc.description.abstractIn this study, rectangle-shaped SiO2 hard masks with various orientations were employed to find various facets on wet-etched patterned sapphire substrate (PSS). Seven facets (A, B, B-1, B-2, D-1, D-2 and E) were observed after etching. The surfaces of A, B and E-facets were smooth. Their plane indexes were {13 (4) over bar7}, {10 (1) over bar4} and {12 (3) over bar5}, respectively. On the other hand, the surfaces of B-1, B-2, D-1 and D-2-facets were not smooth, with some ambiguous stripes, which were investigated by using "zigzag triangle" hard mask. A large triangle-mask was employed to investigate smooth facets and the GaN epitaxial behavior. It was found that most of the growth of zincblende GaN was initiated not from A and B-facets but E-facets. (C) 2013 The Electrochemical Society. All rights reserved.en_US
dc.identifier.doi10.1149/2.004402jssen_US
dc.identifier.issn2162-8769en_US
dc.identifier.journalECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGYen_US
dc.identifier.urihttp://dx.doi.org/10.1149/2.004402jssen_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/23849
dc.identifier.wosnumberWOS:000331485600015
dc.language.isoen_USen_US
dc.titleThe Formation of Smooth Facets on Wet-Etched Patterned Sapphire Substrateen_US
dc.typeArticleen_US

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