Smart assembling of multi-scaled functional interfaces in thermoelectric Ga2Te3/Te hetero-nanocomposites
| dc.citation.epage | 14288 | en_US |
| dc.citation.issue | 23 | en_US |
| dc.citation.spage | 14280 | en_US |
| dc.citation.woscount | 1 | en_US |
| dc.contributor.author | Chang, Hsiu-Cheng | en_US |
| dc.contributor.author | Chiang, Ming-Hsiu | en_US |
| dc.contributor.author | Tsai, Tsung-Che | en_US |
| dc.contributor.author | Chen, Tsung-Han | en_US |
| dc.contributor.author | Whang, Wha-Tzong | en_US |
| dc.contributor.author | Chen, Chun-Hua | en_US |
| dc.contributor.department | 材料科學與工程學系 | zh_TW |
| dc.contributor.department | Department of Materials Science and Engineering | en_US |
| dc.date.accessioned | 2015-07-21T11:20:35Z | |
| dc.date.available | 2015-07-21T11:20:35Z | |
| dc.date.issued | 2014-01-01 | en_US |
| dc.description.abstract | We describe an innovative concept and facile approach in fabricating laterally assembled Ga2Te3/Te binary nanocomposite films, which comprise two-dimensional quasi-periodic Ga2Te3 nanoassemblies surrounded by interlocking highly-conductive Te single crystals for comprehensively establishing subnanoto micro-scaled multi-style versatile interfaces. The distinct Ga2Te3/Te nanocomposite film exhibits a power factor that is about 60 times higher than the reported conventional Ga2Te3 and Te materials, mainly due to the 2- to 3-order improved electrical conductivity and the comparable Seebeck coefficient. | en_US |
| dc.identifier.doi | 10.1039/c4nr02765e | en_US |
| dc.identifier.issn | 2040-3364 | en_US |
| dc.identifier.journal | NANOSCALE | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1039/c4nr02765e | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/123997 | |
| dc.identifier.wosnumber | WOS:000344997600027 | en_US |
| dc.language.iso | en_US | en_US |
| dc.title | Smart assembling of multi-scaled functional interfaces in thermoelectric Ga2Te3/Te hetero-nanocomposites | en_US |
| dc.type | Article | en_US |