A new charge-pumping technique for profiling the interface-states and oxide-trapped charges in MOSFET's

Abstract

A new charge-pumping method has been developed to characterize the hot-carrier induced local damages. By holding the rising and falling slopes of the gate pulse constant and then varying the high-level (V-GH) and base-level (V-GL) voltages, the lateral distribution of interface-states ( N-it (x)) and oxide-trapped charges (Q(ox) (x)) can be profiled. The experimental results show that during extracting Q(ox) (x) after hot-carrier stress, a contradictory result occurs between the extraction methods by varing the high-level (VGH) and base-level (V-GL) voltages. As a result, some modifications are made to eliminate the perturbation induced by the generated interface-states after hot-carrier stress for extracting Q(ox) (x).