Investigation of Fin-Width Sensitivity of Threshold Voltage for InGaAs and Si Negative-Capacitance FinFETs Considering Quantum-Confinement Effect

Abstract

This paper investigates the fin-width (W-Fin) sensitivity of threshold voltage (V-T) for InGaAs and Si channel negative-capacitance FinFETs (NC-FinFETs) using a theoretically derived quantum subthreshold model corroborated with TCAD numerical simulation. Our study indicates that due to the action of negative capacitance, the NC-FinFET possesses smaller VT sensitivity to W-Fin than the FinFET counterpart. In addition, we point out and demonstrate that a device design with higher internal voltage amplification can be utilized to further reduce the V-T sensitivity to W-Fin for NC-FinFETs. Our study may provide insights for future scaling of FinFETs.