High quantum efficiency dots-in-a-well quantum dot infrared photodetectors with AlGaAs confinement enhancing layer
| dc.citation.epage | en_US | |
| dc.citation.issue | 19 | en_US |
| dc.citation.volume | 92 | en_US |
| dc.citation.woscount | 35 | |
| dc.contributor.author | Ling, H. S. | en_US |
| dc.contributor.author | Wang, S. Y. | en_US |
| dc.contributor.author | Lee, C. P. | en_US |
| dc.contributor.author | Lo, M. C. | en_US |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.date.accessioned | 2014-12-08T15:12:10Z | |
| dc.date.available | 2014-12-08T15:12:10Z | |
| dc.date.issued | 2008-05-12 | en_US |
| dc.description.abstract | We demonstrate the high quantum efficiency InAs/In(0.15)Ga(0.85)As dots-in-a-well (DWELL) quantum dot infrared photodetectors (QDIPs). A thin Al(0.3)Ga(0.7)As layer was inserted on top of the InAs quantum dots (QDs) to enhance the confinement of QD states in the DWELL structure. The better confinement of the electronic states increases the oscillation strength of the infrared absorption. The higher excited state energy also improves the escape probability of the photoelectrons. Compared with the conventional DWELL QDIPs, the quantum efficiency increases more than 20 times and the detectivity is about an order of magnitude higher at 77 K. (c) 2008 American Institute of Physics. | en_US |
| dc.identifier.doi | 10.1063/1.2926663 | en_US |
| dc.identifier.issn | 0003-6951 | en_US |
| dc.identifier.journal | APPLIED PHYSICS LETTERS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1063/1.2926663 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/9336 | |
| dc.identifier.wosnumber | WOS:000256564200103 | |
| dc.language.iso | en_US | en_US |
| dc.title | High quantum efficiency dots-in-a-well quantum dot infrared photodetectors with AlGaAs confinement enhancing layer | en_US |
| dc.type | Article | en_US |