FABRICATION OF ZN-SI SCHOTTKY-BARRIER DIODE BY CONTROLLING SUBSTRATE TEMPERATURE DURING EVAPORATION
| dc.citation.epage | 648 | en_US |
| dc.citation.issue | 5 | en_US |
| dc.citation.spage | 646 | en_US |
| dc.citation.volume | 16 | en_US |
| dc.contributor.author | CHANG, CY | en_US |
| dc.contributor.author | CHIU, PL | en_US |
| dc.contributor.author | MA, CH | en_US |
| dc.contributor.department | 工學院 | zh_TW |
| dc.contributor.department | College of Engineering | en_US |
| dc.date.accessioned | 2014-12-08T15:07:13Z | |
| dc.date.available | 2014-12-08T15:07:13Z | |
| dc.date.issued | 1973-01-01 | en_US |
| dc.description.abstract | en_US | |
| dc.identifier.issn | 0038-1101 | en_US |
| dc.identifier.journal | SOLID-STATE ELECTRONICS | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/5697 | |
| dc.language.iso | en_US | en_US |
| dc.title | FABRICATION OF ZN-SI SCHOTTKY-BARRIER DIODE BY CONTROLLING SUBSTRATE TEMPERATURE DURING EVAPORATION | en_US |
| dc.type | Note | en_US |
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