Applications of total reflection X-ray fluorescence to analysis of VLSI micro contamination
| dc.citation.epage | 268 | en_US |
| dc.citation.issue | 2 | en_US |
| dc.citation.spage | 266 | en_US |
| dc.citation.volume | 12 | en_US |
| dc.citation.woscount | 1 | |
| dc.contributor.author | Liou, BW | en_US |
| dc.contributor.author | Lee, CL | en_US |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.date.accessioned | 2014-12-08T15:46:40Z | |
| dc.date.available | 2014-12-08T15:46:40Z | |
| dc.date.issued | 1999-05-01 | en_US |
| dc.description.abstract | This paper demonstrates the microcontamination analysis on wafers after they went through the conventional ULSI processing steps, by using the vapor phase decomposition/total reflection X-ray fluorescence (VPD/TXRF) technique. It was found that the wafer location in the holding cassette during the chemical cleaning step affected the cleanness of the wafer, and the class 1 environment was not enough to keep the wafer to a contamination level below 5 x 10(9) atoms/cm(2) for three days storing, The breakdown characteristic of a gate oxide was shown to be closely related with the cleanness of the surface of the oxide. | en_US |
| dc.identifier.doi | 10.1109/66.762886 | en_US |
| dc.identifier.issn | 0894-6507 | en_US |
| dc.identifier.journal | IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1109/66.762886 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/31384 | |
| dc.identifier.wosnumber | WOS:000080122200015 | |
| dc.language.iso | en_US | en_US |
| dc.title | Applications of total reflection X-ray fluorescence to analysis of VLSI micro contamination | en_US |
| dc.type | Letter | en_US |