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SHALLOW SURFACE IMPURITY STATES OF ISOTROPIC AND ANISOTROPIC SEMICONDUCTORS

dc.citation.epage12en_US
dc.citation.issue1en_US
dc.citation.spage1en_US
dc.citation.volume222en_US
dc.citation.woscount5
dc.contributor.authorPEI, JHen_US
dc.contributor.authorDAI, CMen_US
dc.contributor.authorCHUU, DSen_US
dc.contributor.department電控工程研究所zh_TW
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentInstitute of Electrical and Control Engineeringen_US
dc.contributor.departmentDepartment of Photonicsen_US
dc.date.accessioned2014-12-08T15:05:44Z
dc.date.available2014-12-08T15:05:44Z
dc.date.issued1989-11-01en_US
dc.identifier.issn0039-6028en_US
dc.identifier.journalSURFACE SCIENCEen_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/4270
dc.identifier.wosnumberWOS:A1989CA20800004
dc.language.isoen_USen_US
dc.titleSHALLOW SURFACE IMPURITY STATES OF ISOTROPIC AND ANISOTROPIC SEMICONDUCTORSen_US
dc.typeArticleen_US

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