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A SWITCHING DEVICE OF A PN JUNCTION STRUCTURE WITH 2 LAYERS OF THIN OXIDE

dc.citation.epage974en_US
dc.citation.issue6en_US
dc.citation.spage972en_US
dc.citation.volume28en_US
dc.citation.woscount0
dc.contributor.authorCHANG, DCYen_US
dc.contributor.authorLEE, CLen_US
dc.contributor.authorLEI, TFen_US
dc.contributor.department交大名義發表zh_TW
dc.contributor.department電控工程研究所zh_TW
dc.contributor.departmentNational Chiao Tung Universityen_US
dc.contributor.departmentInstitute of Electrical and Control Engineeringen_US
dc.date.accessioned2014-12-08T15:05:48Z
dc.date.available2014-12-08T15:05:48Z
dc.date.issued1989-06-01en_US
dc.identifier.issn0021-4922en_US
dc.identifier.journalJAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERSen_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/4346
dc.identifier.wosnumberWOS:A1989AK97400005
dc.language.isoen_USen_US
dc.titleA SWITCHING DEVICE OF A PN JUNCTION STRUCTURE WITH 2 LAYERS OF THIN OXIDEen_US
dc.typeArticleen_US

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