Suspended GaN-based band-edge type photonic crystal nanobeam cavities
| dc.citation.epage | 2323 | en_US |
| dc.citation.issue | 3 | en_US |
| dc.citation.spage | 2317 | en_US |
| dc.citation.volume | 22 | en_US |
| dc.citation.woscount | 0 | |
| dc.contributor.author | Wu, Tzeng Tsong | en_US |
| dc.contributor.author | Chen, Hao Wen | en_US |
| dc.contributor.author | Lan, Yu Pin | en_US |
| dc.contributor.author | Lu, Tien Chang | en_US |
| dc.contributor.author | Wang, Shing Chung | en_US |
| dc.contributor.department | 光電工程學系 | zh_TW |
| dc.contributor.department | Department of Photonics | en_US |
| dc.date.accessioned | 2014-12-08T15:35:32Z | |
| dc.date.available | 2014-12-08T15:35:32Z | |
| dc.date.issued | 2014-02-10 | en_US |
| dc.description.abstract | We demonstrated GaN-based photonic crystal (PC) nanobeam cavities by using the e-beam lithography and the suspended nanobeams were realized by focused-ion beam (FIB) milling. One resonant mode was clearly observed at 411.7 nm at 77K by optical pumping. The quality factor was measured to be to 7.4 x 10(2). Moreover, the degree of polarization value was measured to be 40%. The temperature-dependent characteristics were measured and discussed, which unambiguously demonstrated that the observed resonant peak originated from the band-edge mode of the one-dimensional PC nanobeam. (C) 2014 Optical Society of America | en_US |
| dc.identifier.doi | 10.1364/OE.22.002317 | en_US |
| dc.identifier.issn | 1094-4087 | en_US |
| dc.identifier.journal | OPTICS EXPRESS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1364/OE.22.002317 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/24034 | |
| dc.identifier.wosnumber | WOS:000332518100017 | |
| dc.language.iso | en_US | en_US |
| dc.title | Suspended GaN-based band-edge type photonic crystal nanobeam cavities | en_US |
| dc.type | Article | en_US |