High-density MIM canpacitors using AlTaOx dielectrics
| dc.citation.epage | 308 | en_US |
| dc.citation.issue | 5 | en_US |
| dc.citation.spage | 306 | en_US |
| dc.citation.volume | 24 | en_US |
| dc.citation.woscount | 15 | |
| dc.contributor.author | Yang, MY | en_US |
| dc.contributor.author | Huang, CH | en_US |
| dc.contributor.author | Chin, A | en_US |
| dc.contributor.author | Zhu, CX | en_US |
| dc.contributor.author | Li, MF | en_US |
| dc.contributor.author | Kwong, DL | en_US |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.date.accessioned | 2014-12-08T15:40:57Z | |
| dc.date.available | 2014-12-08T15:40:57Z | |
| dc.date.issued | 2003-05-01 | en_US |
| dc.description.abstract | The authors have obtained good MIM capacitor integrity of high-capacitance density of 10 fF/mum(2) using high-k AlTaOx fabricated at 400degreesC. In addition, small voltage dependence of capacitance of < 600, ppm (quadratic voltage coefficient of only 130 ppm/V-2). is obtained at 1 GHz using their mathematical derivation from measured high-frequency S parameters. These good results ensure the high-k AlTaOx. MIM capacitor technology is useful for high-precision circuits operated at the RF frequency regime. | en_US |
| dc.identifier.doi | 10.1109/LED.2003.812572 | en_US |
| dc.identifier.issn | 0741-3106 | en_US |
| dc.identifier.journal | IEEE ELECTRON DEVICE LETTERS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1109/LED.2003.812572 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/27913 | |
| dc.identifier.wosnumber | WOS:000184064600007 | |
| dc.language.iso | en_US | en_US |
| dc.subject | capacitor | en_US |
| dc.subject | dielectric constant | en_US |
| dc.subject | frequency drpendence | en_US |
| dc.subject | high kappa | en_US |
| dc.subject | MIM | en_US |
| dc.subject | RF | en_US |
| dc.title | High-density MIM canpacitors using AlTaOx dielectrics | en_US |
| dc.type | Article | en_US |