Modified buffer layers for polymer photovoltaic devices
| dc.citation.epage | en_US | |
| dc.citation.issue | 6 | en_US |
| dc.citation.volume | 90 | en_US |
| dc.citation.woscount | 96 | |
| dc.contributor.author | Ko, Chu-Jung | en_US |
| dc.contributor.author | Lin, Yi-Kai | en_US |
| dc.contributor.author | Chen, Fang-Chung | en_US |
| dc.contributor.author | Chu, Chi-Wei | en_US |
| dc.contributor.department | 光電工程學系 | zh_TW |
| dc.contributor.department | 顯示科技研究所 | zh_TW |
| dc.contributor.department | Department of Photonics | en_US |
| dc.contributor.department | Institute of Display | en_US |
| dc.date.accessioned | 2014-12-08T15:14:43Z | |
| dc.date.available | 2014-12-08T15:14:43Z | |
| dc.date.issued | 2007-02-05 | en_US |
| dc.description.abstract | The influence of anode buffer layers on the performance of polymer photovoltaic devices based on blends of poly(3-hexylthiophene) and [6,6]-phenyl-C-61-buytyric acid methyl ester has been investigated. The buffer layers consist of poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT-PSS) doped with different concentrations of mannitol. Improved power conversion efficiency, up to 5.2%, has been observed by reducing the resistance of PEDOT:PSS after doping. One extrapolation method has been developed to exclude the resistance from the connection of the electrodes from the total device resistance. The results confirm that the device improvement is due to the reduction of series resistance of the PEDOT:PSS after the mannitol doping. (c) 2007 American Institute of Physics. | en_US |
| dc.identifier.doi | 10.1063/1.2437703 | en_US |
| dc.identifier.issn | 0003-6951 | en_US |
| dc.identifier.journal | APPLIED PHYSICS LETTERS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1063/1.2437703 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/11140 | |
| dc.identifier.wosnumber | WOS:000244162300101 | |
| dc.language.iso | en_US | en_US |
| dc.title | Modified buffer layers for polymer photovoltaic devices | en_US |
| dc.type | Article | en_US |