THE ELECTRICAL CHARACTERISTICS OF POLYSILICON OXIDE GROWN IN PURE N2O
| dc.citation.epage | 386 | en_US |
| dc.citation.issue | 9 | en_US |
| dc.citation.spage | 385 | en_US |
| dc.citation.volume | 16 | en_US |
| dc.citation.woscount | 21 | |
| dc.contributor.author | LAI, CS | en_US |
| dc.contributor.author | LEI, TF | en_US |
| dc.contributor.author | LEE, CL | en_US |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.date.accessioned | 2014-12-08T15:03:13Z | |
| dc.date.available | 2014-12-08T15:03:13Z | |
| dc.date.issued | 1995-09-01 | en_US |
| dc.description.abstract | N2O was used to grow silicon polyoxide. It was found that the N2O-grown polyoxide had a lower leakage current but a higher breakdown field when the top-electrode was positively biased, This is opposite to that of conventional O-2-grown polyoxide. Moreover, it had less electron trapping when stressed and a larger charge-to-breakdown. | en_US |
| dc.identifier.doi | 10.1109/55.406796 | en_US |
| dc.identifier.issn | 0741-3106 | en_US |
| dc.identifier.journal | IEEE ELECTRON DEVICE LETTERS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1109/55.406796 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/1769 | |
| dc.identifier.wosnumber | WOS:A1995RQ87100005 | |
| dc.language.iso | en_US | en_US |
| dc.title | THE ELECTRICAL CHARACTERISTICS OF POLYSILICON OXIDE GROWN IN PURE N2O | en_US |
| dc.type | Article | en_US |