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Optimization of the Cu wire bonding process for IC assembly using Taguchi methods

dc.citation.epage59en_US
dc.citation.issue1en_US
dc.citation.spage53en_US
dc.citation.volume51en_US
dc.citation.woscount15
dc.contributor.authorSu, Chao-Tonen_US
dc.contributor.authorYeh, Cheng-Jungen_US
dc.contributor.department工業工程與管理學系zh_TW
dc.contributor.departmentDepartment of Industrial Engineering and Managementen_US
dc.date.accessioned2014-12-08T15:38:00Z
dc.date.available2014-12-08T15:38:00Z
dc.date.issued2011-01-01en_US
dc.description.abstractThe yield of IC assembly manufacturing is dependent on wire bonding. Recently, the semiconductor industry demands smaller IC designs and higher performance requirements. As such, bonding wires must be stronger, finer, and more solid. The cost of gold is continuously appreciating, and this has become a key issue in IC assembly and design. Copper wire bonding is an alternative solution to this problem. It is expected to be superior over Au wires in terms of cost, quality, and fine-pitch bonding pad design. To obtain the best wire bonding quality, we employed Taguchi methods in optimizing the Cu wire bonding process. With Cu wire bonding technology, the production yield increased from 98.5% to 99.3% and brought approximately USD 0.7 million in savings. (C) 2010 Elsevier Ltd. All rights reserved.en_US
dc.identifier.doi10.1016/j.microrel.2010.09.007en_US
dc.identifier.issn0026-2714en_US
dc.identifier.journalMICROELECTRONICS RELIABILITYen_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.microrel.2010.09.007en_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/26093
dc.identifier.wosnumberWOS:000287057500010
dc.language.isoen_USen_US
dc.titleOptimization of the Cu wire bonding process for IC assembly using Taguchi methodsen_US
dc.typeArticleen_US

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