Chemical Precursor for the Synthesis of Diamond Films at Low Temperature
| dc.citation.issue | 4 | en_US |
| dc.citation.volume | 3 | en_US |
| dc.citation.woscount | 7 | |
| dc.contributor.author | Tiwari, Rajanish N. | en_US |
| dc.contributor.author | Chang, Li | en_US |
| dc.contributor.department | 材料科學與工程學系 | zh_TW |
| dc.contributor.department | Department of Materials Science and Engineering | en_US |
| dc.date.accessioned | 2014-12-08T15:07:47Z | |
| dc.date.available | 2014-12-08T15:07:47Z | |
| dc.date.issued | 2010 | en_US |
| dc.description.abstract | In this study, diamond films have been synthesized on adamantane-coated (100) Si substrates at 530 degrees C by microwave plasma chemical vapor deposition from a gaseous mixture of methane and hydrogen. Scanning electron microscopy, Raman spectroscopy, and X-ray diffraction were employed to characterize the carbon chemical species on the Si substrate from adamantane into diamond. These measurements provide definitive evidence for formation of high-crystalline diamond film on Si substrate without any other pretreatments. Moreover, the possible mechanisms for the diamond formation are presented. (C) 2010 The Japan Society of Applied Physics | en_US |
| dc.identifier.doi | 10.1143/APEX.3.045501 | en_US |
| dc.identifier.issn | 1882-0778 | en_US |
| dc.identifier.journal | APPLIED PHYSICS EXPRESS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1143/APEX.3.045501 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/6117 | |
| dc.identifier.wosnumber | WOS:000277297000018 | |
| dc.language.iso | en_US | en_US |
| dc.title | Chemical Precursor for the Synthesis of Diamond Films at Low Temperature | en_US |
| dc.type | Article | en_US |