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GROUND-STATES OF SHALLOW DONOR IMPURITIES ON ANISOTROPIC SEMICONDUCTOR SURFACES

dc.citation.epage207en_US
dc.citation.issue3en_US
dc.citation.spage202en_US
dc.citation.volume3en_US
dc.citation.woscount8
dc.contributor.authorHUANG, WJen_US
dc.contributor.authorCHOU, WCen_US
dc.contributor.authorCHUU, DSen_US
dc.contributor.authorHAN, CSen_US
dc.contributor.authorMEI, WNen_US
dc.contributor.department交大名義發表zh_TW
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentNational Chiao Tung Universityen_US
dc.contributor.departmentDepartment of Photonicsen_US
dc.date.accessioned2014-12-08T15:06:00Z
dc.date.available2014-12-08T15:06:00Z
dc.date.issued1988-03-01en_US
dc.identifier.doi10.1088/0268-1242/3/3/007en_US
dc.identifier.issn0268-1242en_US
dc.identifier.journalSEMICONDUCTOR SCIENCE AND TECHNOLOGYen_US
dc.identifier.urihttp://dx.doi.org/10.1088/0268-1242/3/3/007en_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/4546
dc.identifier.wosnumberWOS:A1988M392600007
dc.language.isoen_USen_US
dc.titleGROUND-STATES OF SHALLOW DONOR IMPURITIES ON ANISOTROPIC SEMICONDUCTOR SURFACESen_US
dc.typeArticleen_US

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