Characterization and modeling of trap number and creation time distributions under negative-bias-temperature stress
| dc.citation.epage | en_US | |
| dc.citation.issue | 8 | en_US |
| dc.citation.volume | 101 | en_US |
| dc.citation.woscount | 1 | |
| dc.contributor.author | Chiu, Jung-Piao | en_US |
| dc.contributor.author | Li, Chi-Wei | en_US |
| dc.contributor.author | Wang, Tahui | en_US |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.date.accessioned | 2014-12-08T15:24:18Z | |
| dc.date.available | 2014-12-08T15:24:18Z | |
| dc.date.issued | 2012-08-20 | en_US |
| dc.description.abstract | Individual trapped charge creations and a trap number in p-type metal-oxide-semiconductor field effect transistors (pMOSFETs) under negative bias temperature instability (NBTI) stress are investigated. We find that the characteristic times of a trapped charge creation scatter over several decades of time in small area pMOSFETs, which is attributed to an activation energy distribution in the reaction-diffusion (RD) model of NBTI. We develop a statistical model by combining the RD model with an extracted activation energy distribution to calculate a threshold voltage shift distribution at different NBTI stress times. Our model agrees with measured results very well. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4748108] | en_US |
| dc.identifier.doi | 10.1063/1.4748108 | en_US |
| dc.identifier.issn | 0003-6951 | en_US |
| dc.identifier.journal | APPLIED PHYSICS LETTERS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1063/1.4748108 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/16903 | |
| dc.identifier.wosnumber | WOS:000308420800071 | |
| dc.language.iso | en_US | en_US |
| dc.title | Characterization and modeling of trap number and creation time distributions under negative-bias-temperature stress | en_US |
| dc.type | Article | en_US |