Impacts of precursor flow rate and temperature of PECVD-SiN capping films on strained-channel NMOSFETs
| dc.citation.epage | 336 | en_US |
| dc.citation.spage | 335 | en_US |
| dc.contributor.author | Lu, Ching-Sen | en_US |
| dc.contributor.author | Lin, Horng-Chih | en_US |
| dc.contributor.author | Lee, Yao-Jen | en_US |
| dc.contributor.author | Huang, Tiao-Yuan | en_US |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.date.accessioned | 2014-12-08T15:16:17Z | |
| dc.date.available | 2014-12-08T15:16:17Z | |
| dc.date.issued | 2007 | en_US |
| dc.identifier.isbn | 978-1-4244-1891-6 | en_US |
| dc.identifier.journal | 2007 INTERNATIONAL SEMICONDUCTOR DEVICE RESEARCH SYMPOSIUM, VOLS 1 AND 2 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/12067 | |
| dc.identifier.wosnumber | WOS:000255857100172 | |
| dc.language.iso | en_US | en_US |
| dc.title | Impacts of precursor flow rate and temperature of PECVD-SiN capping films on strained-channel NMOSFETs | en_US |
| dc.type | Proceedings Paper | en_US |
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