Design of Wide-IF-Band CMOS Mixer with LO Multiplier

Abstract

This paper reports the development of K-band wide-IF-band CMOS mixer with LO multiplier suitable for wideband applications. To achieve such broad bandwidth, several design techniques-such as current-reuse differential-pair with LC resonance circuit, and simultaneous in-band gain peaking and off-band gain tailoring-have been analyzed and employed. The on-wafer measurement of this 17.4-26.1GHz TSMC 0.18 mu m CMOS mixer with LO doubler shows a -1dB conversion gain, 11dB noise figure, -6dBm input-referred 1dB compression point, 40dB RF-IF isolation, and 45dB LO-IF isolation at 8.7GHz. The chip size is 1400 x 1300 mu m(2).