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Design of Wide-IF-Band CMOS Mixer with LO Multiplier

dc.citation.epage178en_US
dc.citation.spage176en_US
dc.contributor.authorTsai, Han-Tingen_US
dc.contributor.authorTseng, Pei-Lingen_US
dc.contributor.authorChang, Che-Weien_US
dc.contributor.authorHu, Roberten_US
dc.contributor.authorJou, Christina F.en_US
dc.contributor.department資訊工程學系zh_TW
dc.contributor.departmentDepartment of Computer Scienceen_US
dc.date.accessioned2014-12-08T15:34:49Z
dc.date.available2014-12-08T15:34:49Z
dc.date.issued2013en_US
dc.description.abstractThis paper reports the development of K-band wide-IF-band CMOS mixer with LO multiplier suitable for wideband applications. To achieve such broad bandwidth, several design techniques-such as current-reuse differential-pair with LC resonance circuit, and simultaneous in-band gain peaking and off-band gain tailoring-have been analyzed and employed. The on-wafer measurement of this 17.4-26.1GHz TSMC 0.18 mu m CMOS mixer with LO doubler shows a -1dB conversion gain, 11dB noise figure, -6dBm input-referred 1dB compression point, 40dB RF-IF isolation, and 45dB LO-IF isolation at 8.7GHz. The chip size is 1400 x 1300 mu m(2).en_US
dc.identifier.isbn978-1-4799-1472-2en_US
dc.identifier.journal2013 ASIA-PACIFIC MICROWAVE CONFERENCE PROCEEDINGS (APMC 2013)en_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/23700
dc.identifier.wosnumberWOS:000330851900056
dc.language.isoen_USen_US
dc.subjectMMICen_US
dc.subjectwidebanden_US
dc.subjectCMOSen_US
dc.subjectmultiplieren_US
dc.subjectmixeren_US
dc.titleDesign of Wide-IF-Band CMOS Mixer with LO Multiplieren_US
dc.typeProceedings Paperen_US

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