High Field-Emission Stability of Offset-Thin-Film Transistor-Controlled Al-Doped Zinc Oxide Nanowires
| dc.citation.epage | en_US | |
| dc.citation.issue | 4 | en_US |
| dc.citation.volume | 50 | en_US |
| dc.citation.woscount | 2 | |
| dc.contributor.author | Yang, Po-Yu | en_US |
| dc.contributor.author | Wang, Jyh-Liang | en_US |
| dc.contributor.author | Tsai, Wei-Chih | en_US |
| dc.contributor.author | Wang, Shui-Jinn | en_US |
| dc.contributor.author | Lin, Jia-Chuan | en_US |
| dc.contributor.author | Lee, I-Che | en_US |
| dc.contributor.author | Chang, Chia-Tsung | en_US |
| dc.contributor.author | Cheng, Huang-Chung | en_US |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.date.accessioned | 2014-12-08T15:11:48Z | |
| dc.date.available | 2014-12-08T15:11:48Z | |
| dc.date.issued | 2011-04-01 | en_US |
| dc.description.abstract | Aluminum-doped zinc oxide (AZO) nanowire (NW) arrays incorporating an offset thin-film transistor (offset-TFT) have been proposed to achieve high field-emission (FE) stability. The AZO NW field emission arrays (FEAs) were hydrothermally grown at a low temperature of 85 degrees C. The uncontrolled AZO NW FEAs demonstrated superior FE characteristics (i.e., turn-on field of similar to 2.17 V/mu m and threshold field of similar to 3.43 V/mu m) compared with those of the conventional CNT FEAs grown at a temperature below 600 degrees C. However, uncontrolled AZO NW FEAs show a larger current fluctuation of 15.6%. Therefore, the offset-TFTs were used to control the AZO NW FEAs. Consequently, the fluctuation of AZO NW FEAs could be significantly reduced to less than 2%. This novel field emission device exhibits good emission stability, low-voltage controllability, low-temperature processing, and structural simplicity, making it promising for applications in flat panel displays. (C) 2011 The Japan Society of Applied Physics | en_US |
| dc.identifier.doi | 10.1143/JJAP.50.04DN07 | en_US |
| dc.identifier.issn | 0021-4922 | en_US |
| dc.identifier.journal | JAPANESE JOURNAL OF APPLIED PHYSICS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1143/JJAP.50.04DN07 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/9047 | |
| dc.identifier.wosnumber | WOS:000289722400172 | |
| dc.language.iso | en_US | en_US |
| dc.title | High Field-Emission Stability of Offset-Thin-Film Transistor-Controlled Al-Doped Zinc Oxide Nanowires | en_US |
| dc.type | Article | en_US |