H-2/O-2 PLASMA ON POLYSILICON THIN-FILM TRANSISTOR
| dc.citation.epage | 117 | en_US |
| dc.citation.issue | 3 | en_US |
| dc.citation.spage | 115 | en_US |
| dc.citation.volume | 14 | en_US |
| dc.citation.woscount | 21 | |
| dc.contributor.author | CHERN, HN | en_US |
| dc.contributor.author | LEE, CL | en_US |
| dc.contributor.author | LEI, TF | en_US |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.date.accessioned | 2014-12-08T15:04:37Z | |
| dc.date.available | 2014-12-08T15:04:37Z | |
| dc.date.issued | 1993-03-01 | en_US |
| dc.description.abstract | This letter reports that the H-2 plasma followed by the O2 plasma is more effective to passivate grain boundary states in the polysilicon thin film. Polysilicon thin-film transistors (TFT's) made after applying H-2/O2 Plasma treatment can exhibit a turn-on threshold voltage of -0.1 V, a subthreshold swing of 0.154 V/decade, an ON/OFF current ratio I(on)/I(off) over 1 x 10(8), and an electron mobility of 40.2 cm2/V . S. | en_US |
| dc.identifier.doi | 10.1109/55.215129 | en_US |
| dc.identifier.issn | 0741-3106 | en_US |
| dc.identifier.journal | IEEE ELECTRON DEVICE LETTERS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1109/55.215129 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/3103 | |
| dc.identifier.wosnumber | WOS:A1993KN76400007 | |
| dc.language.iso | en_US | en_US |
| dc.title | H-2/O-2 PLASMA ON POLYSILICON THIN-FILM TRANSISTOR | en_US |
| dc.type | Article | en_US |