Dependence of the Noise Behavior on the Drain Current for Thin Film Transistors
| dc.citation.epage | 231 | en_US |
| dc.citation.issue | 2 | en_US |
| dc.citation.spage | 229 | en_US |
| dc.citation.volume | 35 | en_US |
| dc.citation.woscount | 1 | |
| dc.contributor.author | Tai, Ya-Hsiang | en_US |
| dc.contributor.author | Chang, Chun-Yi | en_US |
| dc.contributor.author | Hsieh, Chung-Lun | en_US |
| dc.contributor.author | Yang, Yung-Hsuan | en_US |
| dc.contributor.author | Chao, Wei-Kuang | en_US |
| dc.contributor.author | Chen, Huan-Ean | en_US |
| dc.contributor.department | 光電工程學系 | zh_TW |
| dc.contributor.department | 顯示科技研究所 | zh_TW |
| dc.contributor.department | Department of Photonics | en_US |
| dc.contributor.department | Institute of Display | en_US |
| dc.date.accessioned | 2014-12-08T15:35:05Z | |
| dc.date.available | 2014-12-08T15:35:05Z | |
| dc.date.issued | 2014-02-01 | en_US |
| dc.description.abstract | In this letter, a noise formula is newly proposed to calculate the low frequency noise for the three kinds of amorphous silicon, low temperature polycrystalline silicon, and amorphous indium-gallium-zinc oxide (a-IGZO) thin film transistors (TFTs). It is found that the noise behavior of the TFT depends on its drain current in a simple manner. Based on the analysis, the ratios of drain current to the noise level for these TFTs are compared. It reveals that a-IGZO TFT is the best candidate to be used in the active pixel sensor. | en_US |
| dc.identifier.doi | 10.1109/LED.2013.2291565 | en_US |
| dc.identifier.issn | 0741-3106 | en_US |
| dc.identifier.journal | IEEE ELECTRON DEVICE LETTERS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1109/LED.2013.2291565 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/23809 | |
| dc.identifier.wosnumber | WOS:000331377500027 | |
| dc.language.iso | en_US | en_US |
| dc.subject | Thin-film transistor (TFTs) | en_US |
| dc.subject | low frequency noise (LFN) | en_US |
| dc.subject | amorphous indium-gallium-zinc oxide (a-IGZO) | en_US |
| dc.subject | active pixel sensor (APS) | en_US |
| dc.title | Dependence of the Noise Behavior on the Drain Current for Thin Film Transistors | en_US |
| dc.type | Article | en_US |